DPS
Drejtoria e Përgjithshme e Standardizimit
0 Produkte
Llogaria ime
E-albania
Tel/Cel: +355 4 222 62 55
E-mail: info@dps.gov.al
Adresa: Rr.: "Reshit Collaku", (pranë ILDKPKI, kati VI), Kutia Postare 98, Tiranë - Shqipëri
Main menu

IEC 62417:2010 ED1

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
22 pri 2010

General information

60.60     22 pri 2010

IEC

TC 47

International Standard

31.080.30  

anglisht   frëngjisht  

Buying

Publikuar

Language in which you want to receive the document.

Scope

IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

Life cycle

NOW

PUBLISHED
IEC 62417:2010 ED1
60.60 Standard published
22 pri 2010