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IEC 62417:2010 ED1

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

Apr 22, 2010

General information

60.60     Apr 22, 2010

IEC

TC 47

International Standard

31.080.30  

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Scope

IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

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PUBLISHED
IEC 62417:2010 ED1
60.60 Standard published
Apr 22, 2010