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Internet of Things (IoT) – Reference architecture guidance for ISO/IEC 30141
30.60 Close of voting/ comment period
High-voltage test techniques - Infrared thermal imaging inspection of high-voltage electrical equipment
10.60 Close of voting
Nuclear Facilities – Instrumentation, Control and Electrical Power Systems – Explainability Aspects of Artificial Intelligence Applications
10.20 New project ballot initiated
Nuclear Power Plants - Instrumentation, control and electrical power systems - Application of simulation techniques
00.00 Proposal for new project received
<p>Electromagnetic compatibility (EMC) – Test method for measuring of transfer impedance Z<sub>T</sub> and screening attenuation a<sub>S</sub> or coupling attenuation a<sub>C</sub> on of connectors and assemblies up to and above 3 GHz -– Triaxial Ttube in tube method</p>
00.99 Approval to ballot proposal for new project
Guidance for coupling attenuation and screening attenuation measurement of hybrid cables and assemblies - Triaxial method (IEC 62153-5-x)
00.00 Proposal for new project received
IEC 62783-1-3 Ed 1.0: Twinax cables for digital communications - Part 1-3: Time-domain test methods for Twinax cables for digital communications, Propagation delay, intra-pair skew and inter-pair skew
00.00 Proposal for new project received
Specification of a TD measurement method for twin-axial cables
00.00 Proposal for new project received
Radio-frequency connectors - Part 1-8: Electrical test methods -Voltage standing wave ratio for a single connector by double connector method
00.99 Approval to ballot proposal for new project
Radio-frequency connectors –Part XX: Sectional specification-RF coaxial connectors with 0,6 mm inner diameter of outer conductor-Characteristic impedance 50 Ω– (type 0,6
10.60 Close of voting
Semiconductor device - The recognition criteria of defects in indium phosphide epitaxial wafers - Part 2: Test method for defects using optical microscopy
10.60 Close of voting
Semiconductor device - The recognition criteria of defects in indium phosphide epitaxial wafers - Part 3: Test method for defects using scanning electron microscopy
10.60 Close of voting
General Method for Calculating the Carbon Footprint of Semiconductor Products up to the Manufacturing Process
10.60 Close of voting
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 6: Procedure for identifying and evaluating defects using a combined method of optical inspection, photoluminescence and X-ray topography
10.20 New project ballot initiated
Semiconductor devices - Performance evaluation of semiconductor components and inspection equipment- Part 5: Evaluation methods for composition uniformity in laser dicing process
10.20 New project ballot initiated
Semiconductor devices - Performance evaluation of semiconductor processing components and inspection equipment - Part 2: Nano-scale wafer surface inspection method using white light interferometry
10.20 New project ballot initiated
Integrated Circuits - Standard roadmap for chiplet ICs
00.00 Proposal for new project received
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