IEC 60747-9:2007 ED2

Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)

Publication date: 26 sht 2007

General information

Current stage: 99.60 Effective date: 13 nën 2019

Next stage: WPUB

Originator: IEC

Owner: TC 47/SC 47E

Type: International Standard

ICS: 31.080.30 31.080.01

Gjuha: anglisht frëngjisht

Buying

Statusi: Revised

PDF - 33 921 Lekë

Paper - 33 921 Lekë

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Scope

This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
The major changes with respect to the previous edition are mainly of an editorial nature.

Life cycle

PREVIOUSLY

WITHDRAWN
IEC 60747-9:1998 ED1

WITHDRAWN
IEC 60747-9:1998/AMD1:2001 ED1

ABANDON
IEC 60747-9/AMD2 ED1

NOW

WITHDRAWN
IEC 60747-9:2007 ED2
99.60 Withdrawal effective
13 nën 2019

REVISED BY

PUBLISHED
IEC 60747-9:2019 ED3