IEC 60747-9:2019 ED3

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

Publication date: 13 nën 2019

General information

Current stage: 60.60 Effective date: 13 nën 2019

Originator: IEC

Owner: TC 47/SC 47E

Type: International Standard

ICS: 31.080.01 31.080.30

Gjuha: anglisht frëngjisht

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Statusi: Publikuar

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IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:

reverse-blocking IGBT and its related technical contents have been added;
reverse-conducting IGBT and its related technical contents have been added;
some parts of the previous edition have been amended, combined or deleted.

IEC 60747-9:2019 ED3

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

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