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Thermistors - Directly heated positive step-function temperature coefficient - Part 1-3: Blank detail specification - Inrush current application - Assessment level EZ
20.99 WD approved for registration as CD
Thermistors - Directly heated positive step-function temperature coefficient - Part 1-4: Blank detail specification - Sensing application - Assessment level EZ
20.99 WD approved for registration as CD
Amendment 1 - Live working - Terminology for tools, devices and equipment
50.00 Final text received or FDIS registered for formal approval
Semiconductor devices - Part 14-12: Semiconductor sensors - Performance test methods for CMOS imager-based gas sensors
40.60 Close of voting
Semiconductor devices - Part 16-11: Microwave integrated circuits - Power detectors
40.99 Full report circulated: DIS approved for registration as FDIS
Semiconductor devices - Part 17: Magnetic and capacitive coupler for basic and reinforced insulation
30.60 Close of voting/ comment period
Semiconductor devices - Part 5-17: Optoelectronic devices - Light emitting diode - Measuring methods of optoelectronic parameters of micro scale light emitting diode array
30.20 CD study/ballot initiated
Semiconductor devices - Part 5-18: Optoelectronic devices - Light emitting diodes - Test method of the macro photoluminescence for epitaxial wafers of micro light emitting diodes
40.60 Close of voting
Semiconductor devices - Part 5-19: Optoelectronic devices - Light emitting diodes - Test method of the micro photoluminescence for chip wafers of micro light emitting diodes
40.20 DIS ballot initiated: 12 weeks
Amendment 1 - Semiconductor devices - Part 5-13: Optoelectronic devices - Hydrogen sulphide corrosion test for LED packages
50.99 FDIS or proof approved for publication
Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability
50.20 Proof sent to secretariat or FDIS ballot initiated: 8 weeks
Semiconductor devices - Mechanical and climatic test methods - Part 22-1: Bond strength - wire bond pull test methods
50.20 Proof sent to secretariat or FDIS ballot initiated: 8 weeks
Semiconductor devices - Mechanical and climatic test methods - Part 22-2: Bond strength - Wire bond shear test methods
50.20 Proof sent to secretariat or FDIS ballot initiated: 8 weeks
Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
50.20 Proof sent to secretariat or FDIS ballot initiated: 8 weeks
Semiconductor devices - Mechanical and climatic test methods - Part 24: Accelerated moisture resistance - Unbiased HAST
50.20 Proof sent to secretariat or FDIS ballot initiated: 8 weeks
Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)
50.20 Proof sent to secretariat or FDIS ballot initiated: 8 weeks
Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases
60.00 Standard under publication
Standard test procedures for semiconductor X-ray energy spectrometers
20.99 WD approved for registration as CD
English