IEC 63284:2022 ED1

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

Publication date: 21 pri 2022

General information

Current stage: 60.60 Effective date: 21 pri 2022

Originator: IEC

Owner: TC 47

Type: International Standard

ICS: 31.080.30

Gjuha: anglisht frëngjisht

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Statusi: Publikuar

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Scope

IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress

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PUBLISHED
IEC 63284:2022 ED1
60.60 Standard published
21 pri 2022