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IEC 63601 ED1

Guideline for Evaluating Bias Temperature Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion (Fast track)

General information

40.60     27 dhj 2024

IEC

TC 47

International Standard

Scope

Life cycle

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IN_DEVELOPMENT
IEC 63601 ED1
40.60 Close of voting
27 dhj 2024