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IEC 63601 ED1

Guideline for Evaluating Bias Temperature Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion (Fast track)

General information

40.20     Oct 4, 2024

PRVC    Dec 27, 2024

IEC

TC 47

International Standard

Life cycle

NOW

IN_DEVELOPMENT
IEC 63601 ED1
40.20 DIS ballot initiated: 12 weeks
Oct 4, 2024

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