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IEC 63601 ED1

Guideline for Evaluating Bias Temperature Instability of Silicon Carbide Metal-Oxide-Semiconductor Devices for Power Electronic Conversion (Fast track)

General information

50.00     Oct 15, 2025

CFDIS    Jan 7, 2026

IEC

TC 47

International Standard

Life cycle

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IN_DEVELOPMENT
IEC 63601 ED1
50.00 Final text received or FDIS registered for formal approval
Oct 15, 2025