IEC 63505:2025 ED1

Guidelines for measuring the threshold voltage (<em>V</em><sub>T</sub>) of SiC MOSFETs

Publication date: 8 pri 2025

General information

Current stage: 60.60 Effective date: 8 pri 2025

Originator: IEC

Owner: TC 47

Type: International Standard

ICS: 31.080.30

Gjuha: anglisht

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Statusi: Publikuar

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Scope

IEC 63505:2025 gives guidance on VT measurement methods and conditioning prior to VT testing in SiC power MOSFETs to reduce or eliminate the effect of the aforementioned hysteresis. The method is applicable for PBTI testing, NBTI and threshold voltage changes caused by switching events are excluded from the scope.
SiC MOSFETs have threshold voltage hysteresis caused by transient trap effects, which impacts the evaluation of the actual the VT shift caused by stress tests such as bias temperature instabilities (BTI).

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PUBLISHED
IEC 63505:2025 ED1
60.60 Standard published
8 pri 2025