IEC 63505 ED1

Guidelines for measuring the threshold voltage (V<sub>T</sub>) of SiC MOSFETs

General information

Current stage: 60.00 Effective date: Feb 14, 2025

Next stage: PPUB Next stage date: Mar 28, 2025

Originator: IEC

Owner: TC 47

Type: International Standard

ICS: 31.080.30

Scope

IEC 63505 ED1 gives guidance on VT measurement methods and conditioning prior to VT testing in SiC power MOSFETs to reduce or eliminate the effect of the aforementioned hysteresis. The method is applicable for PBTI testing, NBTI and threshold voltage changes caused by switching events are excluded from the scope.
SiC MOSFETs have threshold voltage hysteresis caused by transient trap effects, which impacts the evaluation of the actual the VT shift caused by stress tests such as bias temperature instabilities (BTI).

Life cycle

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IN_DEVELOPMENT
IEC 63505 ED1
60.00 Standard under publication
Feb 14, 2025