DPS
Drejtoria e Përgjithshme e Standardizimit
0 Produkte
Llogaria ime
E-albania
Tel/Cel: +355 4 222 62 55
E-mail: info@dps.gov.al
Adresa: Rr.: "Reshit Collaku", (pranë ILDKPKI, kati VI), Kutia Postare 98, Tiranë - Shqipëri
Main menu

IEC 63275-2:2022 ED1

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
11 maj 2022

General information

60.60     11 maj 2022

IEC

TC 47

International Standard

31.080.30  

anglisht   frëngjisht  

Buying

Publikuar

Language in which you want to receive the document.

Scope

IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

Life cycle

NOW

PUBLISHED
IEC 63275-2:2022 ED1
60.60 Standard published
11 maj 2022