IEC 63275-2:2022 ED1

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

Publication date: May 11, 2022

General information

Current stage: 60.60 Effective date: May 11, 2022

Originator: IEC

Owner: TC 47

Type: International Standard

ICS: 31.080.30

Languages: English French

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Status: Published

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Scope

IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

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PUBLISHED
IEC 63275-2:2022 ED1
60.60 Standard published
May 11, 2022