IEC 63275-1:2022 ED1

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

Publication date: 21 pri 2022

General information

Current stage: 60.60 Effective date: 21 pri 2022

Originator: IEC

Owner: TC 47

Type: International Standard

ICS: 31.080.30

Gjuha: anglisht frëngjisht

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Statusi: Publikuar

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Scope

IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).

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PUBLISHED
IEC 63275-1:2022 ED1
60.60 Standard published
21 pri 2022