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IEC 63275-1:2022 ED1

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

Apr 21, 2022

General information

60.60     Apr 21, 2022

IEC

TC 47

International Standard

31.080.30  

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Scope

IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).

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PUBLISHED
IEC 63275-1:2022 ED1
60.60 Standard published
Apr 21, 2022