IEC 62373-1:2020 ED1

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

Publication date: 15 korr 2020

General information

Current stage: 60.60 Effective date: 15 korr 2020

Originator: IEC

Owner: TC 47

Type: International Standard

ICS: 31.080.30

Gjuha: anglisht frëngjisht

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Statusi: Publikuar

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Scope

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.

Life cycle

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PUBLISHED
IEC 62373-1:2020 ED1
60.60 Standard published
15 korr 2020