SSH IEC 63068-3:2020 ED1

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

Publication date: 23 qer 2022

General information

Current stage: 60.60 Effective date: 23 qer 2022

Next stage: 95.99

Originator: DPS

Owner: DPS/KT 7

Type: International Standard

ICS: 31.080.99

Gjuha: anglisht

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Statusi: Publikuar

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IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

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PUBLISHED
SSH IEC 63068-3:2020 ED1
60.60 Standard published
23 qer 2022

SSH IEC 63068-3:2020 ED1

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

General information

Buying

Scope

Life cycle

NOW

Related project

Adopted from IEC 63068-3:2020 ED1