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SSH IEC 63068-3:2020 ED1

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

Jun 23, 2022

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60.60     Jun 23, 2022

95.99   

DPS

DPS/KT 7

International Standard

31.080.99  

English  

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Scope

IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

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SSH IEC 63068-3:2020 ED1
60.60 Standard published
Jun 23, 2022

Related project

Adopted from IEC 63068-3:2020 ED1