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SSH IEC 60747-8:2010

Pajisje gjysëmpërçuese - Pajisje diskrete - Pjesa 8: Tranzistorë me efekt fushe

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
9 dhj 2014

General information

60.60     1 korr 2014

DPS

DPS/KT 7

International Standard

31.080.30  

anglisht  

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IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:<br /> - type A: junction-gate type;<br /> - type B: insulated-gate depletion (normally on) type;<br /> - type C: insulated-gate enhancement (normally off) type.<br /> The main changes with respect to the previous edition are listed below.<br /> a) "Clause 3 Classification" was moved and added to Clause 1.<br /> b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.<br /> c) Clause 5, 6 and 7 were amended with necessary additions and deletions. <br /><br />This publication is to be read in conjunction with <a href=''http://webstore.iec.ch/webstore/webstore.nsf/ArtNum_PK/44478''>IEC 60747-1:2006</a>.

Life cycle

NOW

PUBLISHED
SSH IEC 60747-8:2010
60.60 Standard published
1 korr 2014

Related project

Adopted from IEC 60747-8 Ed. 3.0 b