IEC 62047-16:2015 ED1

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods

Publication date: 5 mar 2015

General information

Current stage: 60.60 Effective date: 5 mar 2015

Originator: IEC

Owner: TC 47/SC 47F

Type: International Standard

ICS: 31.080.99

Gjuha: anglisht frëngjisht

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Statusi: Publikuar

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IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μ to 10 μ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

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PUBLISHED
IEC 62047-16:2015 ED1
60.60 Standard published
5 mar 2015