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IEC 62416:2010 ED1

Semiconductor devices - Hot carrier test on MOS transistors

Publication date: 26 pri 2010

General information

Current stage: 60.60 Effective date: 26 pri 2010

Originator: IEC

Owner: TC 47

Type: International Standard

ICS: 31.080.30

Gjuha: anglisht frëngjisht

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Statusi: Publikuar

PDF - 4 523 Lekë

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Scope

IEC 62416:2010 describes the wafer level hot carrier test on NMOS and PMOS transistors. The test is intended to determine whether the single transistors in a certain (C)MOS process meet the required hot carrier lifetime.

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PUBLISHED
IEC 62416:2010 ED1
60.60 Standard published
26 pri 2010