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IEC 63740 ED1

Guideline for Gate Oxide Reliability and Robustness Evaluation Procedures for Silicon Carbide Power MOSFETs (Fast Track)

General information

40.00     29 maj 2026

CCDV    17 korr 2026

IEC

TC 47

International Standard

Scope

Life cycle

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IN_DEVELOPMENT
IEC 63740 ED1
40.00 DIS registered
29 maj 2026