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IEC 63740 ED1

Guideline for Gate Oxide Reliability and Robustness Evaluation Procedures for Silicon Carbide Power MOSFETs (Fast Track)

General information

40.60     Oct 9, 2026

IEC

TC 47

International Standard

Life cycle

NOW

IN_DEVELOPMENT
IEC 63740 ED1
40.60 Close of voting
Oct 9, 2026