IEC 60749-4:2002 ED1

Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)

Publication date: 12 pri 2002

General information

Current stage: 99.60 Effective date: 3 mar 2017

Next stage: WPUB

Originator: IEC

Owner: TC 47

Type: International Standard

ICS: 31.080.01

Gjuha: anglisht frëngjisht spanjisht

Buying

Statusi: Revised

PDF - 2 261 Lekë

Paper - 2 261 Lekë

CD - 2 261 Lekë

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Scope

Provides a highly accelerated temperature and humidity stress test (HAST) for the purpose of evaluating the reliability of non-hermetic packaged semiconductor devices in humid environments.

The contents of the corrigendum of August 2003 have been included in this copy.

Life cycle

PREVIOUSLY

WITHDRAWN
IEC 60749:1996 ED2

WITHDRAWN
IEC 60749:1996/AMD1:2000 ED2

WITHDRAWN
IEC 60749:1996/AMD2:2001 ED2

WITHDRAWN
IEC PAS 62177:2000 ED1

NOW

WITHDRAWN
IEC 60749-4:2002 ED1
99.60 Withdrawal effective
3 mar 2017

CORRIGENDA / AMENDMENTS

WITHDRAWN
IEC 60749-4:2002/COR1:2003 ED1

REVISED BY

PUBLISHED
IEC 60749-4:2017 ED2