Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.
Life cycle
NOW
PUBLISHED IEC 63068-2:2019 ED1 60.60
Standard published 30 jan 2019
Pajisje gjysmëpërçuese - Kriteret e njohjes jo-shkatërruese të defekteve në vaferën homoepitaksiale të karbitit të silikonit për pajisjet e energjisë - Pjesa 2: Metoda e provës për defektet duke përdorur inspektimin optik
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