20.60 23 qer 2026
ISO
ISO/TC 206
International Standard
This document defines a method for evaluating effective in-plane thermal conductivity and conductance of a metalized ceramic substrate bearing a heater chip as an imitation of a SiC power semiconductor. The method provides an indicator for in-plane heat transfer properties of metalized ceramic substrates employed in high-power modules.
IN_DEVELOPMENT
ISO/WD 4825-3
20.60
Close of comment period
23 qer 2026