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ISO 12406:2010

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon
8 nën 2010

General information

90.93     5 tet 2021

ISO

ISO/TC 201/SC 6

International Standard

71.040.40  

anglisht  

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Scope

ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.

Life cycle

NOW

PUBLISHED
ISO 12406:2010
90.93 Standard confirmed
5 tet 2021