ISO 17560:2002

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon

Publication date: 18 korr 2002

95.99 Withdrawal of Standard 10 sht 2014

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Current stage: 95.99 Effective date: 10 sht 2014

Originator: ISO

Owner: ISO/TC 201/SC 6

Type: International Standard

ICS: 71.040.40

Gjuha: anglisht

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Statusi: Shfuqizuar

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ISO 17560:2002 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 1×1016 atoms/cm3 and 1×1020 atoms/cm3, and to crater depths of 50 nm or deeper.

ISO 17560:2002

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon

95.99 Withdrawal of Standard 10 sht 2014

General information

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