IEC 62047-25:2016 ED1

Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area

Publication date: 29 gush 2016

General information

Current stage: 60.60 Effective date: 29 gush 2016

Originator: IEC

Owner: TC 47/SC 47F

Type: International Standard

ICS: 31.080.99

Gjuha: anglisht frëngjisht

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Statusi: Publikuar

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Scope

IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology.

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PUBLISHED
IEC 62047-25:2016 ED1
60.60 Standard published
29 gush 2016