IEC 62047-9:2011 ED1

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

Publication date: 13 korr 2011

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Current stage: 60.60 Effective date: 13 korr 2011

Originator: IEC

Owner: TC 47/SC 47F

Type: International Standard

ICS: 31.080.99

Gjuha: anglisht frëngjisht

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Statusi: Publikuar

PDF - 17 526 Lekë

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IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.

IEC 62047-9:2011 ED1

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

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