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PNW 47-3029 ED1

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 6: Procedure for identifying and evaluating defects using a combined method of optical inspection, photoluminescence and X-ray topography

General information

00.99     7 korr 2026

PNW   

IEC

TC 47

International Standard

Scope

Life cycle

NOW

IN_DEVELOPMENT
PNW 47-3029 ED1
00.99 Approval to ballot proposal for new project
7 korr 2026