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PNW 47-3029 ED1

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 6: Procedure for identifying and evaluating defects using a combined method of optical inspection, photoluminescence and X-ray topography

General information

10.60     16 tet 2026

IEC

TC 47

International Standard

Scope

Life cycle

NOW

IN_DEVELOPMENT
PNW 47-3029 ED1
10.60 Close of voting
16 tet 2026