Semiconductor device - The recognition criteria of defects in indium phosphide epitaxial wafers - Part 3: Test method for defects using scanning electron microscopy
General information
10.6010 korr 2026
IEC
TC 47
International Standard
Scope
Life cycle
NOW
IN_DEVELOPMENT PNW 47-3017 ED1 10.60
Close of voting 10 korr 2026