IEC 60749-2:2002 ED1

Semiconductor devices - Mechanical and climatic test methods - Part 2: Low air pressure

Publication date: 12 pri 2002

General information

Current stage: 60.60 Effective date: 12 pri 2002

Originator: IEC

Owner: TC 47

Type: International Standard

ICS: 31.080.01

Gjuha: anglisht frëngjisht spanjisht

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Statusi: Publikuar

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Scope

Covers the testing of low air pressure on semiconductor devices. The test is intended primarily to determine the ability of component parts and materials to avoid voltage breakdown failures due to the reduced dielectric strength of air and other insulating materials at reduced pressures is only applicable to devices where the operating voltage exceeds 1 000 V.
This test is applicable to all semiconductor devices provided they are in cavity type packages. The test is intended for military and space-related applications only.

The contents of the corrigendum of August 2003 have been included in this copy.

Life cycle

PREVIOUSLY

WITHDRAWN
IEC 60749:1996 ED2

WITHDRAWN
IEC 60749:1996/AMD1:2000 ED2

WITHDRAWN
IEC 60749:1996/AMD2:2001 ED2

NOW

PUBLISHED
IEC 60749-2:2002 ED1
60.60 Standard published
12 pri 2002

CORRIGENDA / AMENDMENTS

PUBLISHED
IEC 60749-2:2002/COR1:2003 ED1