IEC 63068-4:2022 ED1

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence

Publication date: 27 korr 2022

General information

Current stage: 60.60 Effective date: 27 korr 2022

Originator: IEC

Owner: TC 47

Type: International Standard

ICS: 31.080.99

Gjuha: anglisht

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Statusi: Publikuar

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Scope

IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical inspection and PL images to enable the detection and categorization of defects in SiC homoepitaxial wafers.

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PUBLISHED
IEC 63068-4:2022 ED1
60.60 Standard published
27 korr 2022