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IEC 62047-51 ED1

Semiconductor devices - Micro-electromechanical devices - Part 51: Test method of electrical characteristics under two-directional cyclic bending deformation for flexible micro-electromechanical devices

General information

50.20     Oct 16, 2026

PRVD    Nov 27, 2026

IEC

TC 47/SC 47F

International Standard

31.080.99  

Scope

IEC 62047-51 ED1 specifies the test method of electrical characteristics under two-directional cyclic bending deformation for flexible micro-electromechanical devices. These devices include MEMS on the flexible film or embedded in the flexible film. Fully reversed loading is intended for convex and concave deformation. The desired in-plane dimensions of the device for the test method range typically from 1 mm to 300 mm and the thickness ranges from 10 μm to 1 mm, but these are not limiting values. The test method is so designed as to understand and further visualize the entire performance deterioration behaviour after cyclic bending deformation in a concept (Performance – Severity of bending – Number of cycles, e.g. conductance – angular amplitude -number of loading cycles). This document is essential to estimate safety margins over the operation period under a certain level of cyclic bending deformation and indispensable for reliable design of the product employing these devices.

Life cycle

NOW

IN_DEVELOPMENT
IEC 62047-51 ED1
50.20 Proof sent to secretariat or FDIS ballot initiated: 8 weeks
Oct 16, 2026

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