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SSH IEC 63229:2021 ED1

Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

Jun 23, 2022

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60.60     Jun 23, 2022

95.99   

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DPS/KT 7

International Standard

31.080.99  

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Scope

IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.

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PUBLISHED
SSH IEC 63229:2021 ED1
60.60 Standard published
Jun 23, 2022

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Adopted from IEC 63229:2021 ED1