SSH IEC 63068-2:2019 ED1

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection

Publication date: Jun 23, 2022

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Current stage: 60.60 Effective date: Jun 23, 2022

Next stage: 95.99

Originator: DPS

Owner: DPS/KT 7

Type: International Standard

ICS: 31.080.99

Languages: English

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Status: Published

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IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.

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PUBLISHED
SSH IEC 63068-2:2019 ED1
60.60 Standard published
Jun 23, 2022

SSH IEC 63068-2:2019 ED1

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection

General information

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Scope

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Related project

Adopted from IEC 63068-2:2019 ED1 IDENTICAL