The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test.
The objectives of the test are as follows:
a) to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and
b) to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).
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