SSH EN 62047-16:2015

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films – Wafer curvature and cantilever beam deflection methods

Publication date: Jun 10, 2016

General information

Current stage: 60.60 Effective date: Jun 10, 2016

Originator: DPS

Owner: DPS/KT 7

Type: European Norm

ICS: 31.080.99

Languages: English

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Status: Published

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IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μ to 10 μ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

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PUBLISHED
SSH EN 62047-16:2015
60.60 Standard published
Jun 10, 2016

SSH EN 62047-16:2015

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films – Wafer curvature and cantilever beam deflection methods

General information

Buying

Scope

Life cycle

NOW

Related project

Adopted from EN 62047-16:2015

Adopted from IEC 62047-16 Ed. 1.0 b