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SSH EN 62047-9:2011

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

May 30, 2012

General information

60.60     May 30, 2012

DPS

DPS/KT 7

European Norm

31.080.99  

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Scope

IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.

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PUBLISHED
SSH EN 62047-9:2011
60.60 Standard published
May 30, 2012

Related project

Adopted from EN 62047-9:2011

Adopted from IEC 62047-9 Ed. 1.0 b