SSH IEC 63068-1:2019 ED1

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

Publication date: Jun 23, 2022

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Current stage: 60.60 Effective date: Jun 23, 2022

Next stage: 95.99

Originator: DPS

Owner: DPS/KT 7

Type: International Standard

ICS: 31.080.99

Languages: English

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Status: Published

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IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

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PUBLISHED
SSH IEC 63068-1:2019 ED1
60.60 Standard published
Jun 23, 2022

SSH IEC 63068-1:2019 ED1

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

General information

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Scope

Life cycle

NOW

Related project

Adopted from IEC 63068-1:2019 ED1 IDENTICAL