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prSSH IEC 60747-9:2019 ED3

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

General information

10.00     Dec 4, 2025

DPS

DPS/KT 7

International Standard

31.080.01     31.080.30  

Scope

IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:

reverse-blocking IGBT and its related technical contents have been added;
reverse-conducting IGBT and its related technical contents have been added;
some parts of the previous edition have been amended, combined or deleted.

Life cycle

PREVIOUSLY

PUBLISHED
SSH IEC 60747-9:2007

NOW

IN_DEVELOPMENT
prSSH IEC 60747-9:2019 ED3
10.00 Proposal for new project registered
Dec 4, 2025

Related project

Adopted from IEC 60747-9:2019 ED3 IDENTICAL