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SSH IEC 60747-9:2019 ED3

Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

Dec 16, 2025

General information

60.60     Dec 16, 2025

95.99   

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DPS/KT 7

International Standard

31.080.01     31.080.30  

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Scope

IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:

reverse-blocking IGBT and its related technical contents have been added;
reverse-conducting IGBT and its related technical contents have been added;
some parts of the previous edition have been amended, combined or deleted.

Life cycle

PREVIOUSLY

PUBLISHED
SSH IEC 60747-9:2007

NOW

PUBLISHED
SSH IEC 60747-9:2019 ED3
60.60 Standard published
Dec 16, 2025

Related project

Adopted from IEC 60747-9:2019 ED3 IDENTICAL