This document specifies a method for measuring the thermal resistance between a heater chip and a cold plate with the heater chip mounted on a metalized ceramic substrate, imitating a silicon carbide (SiC) high-output power module. This measurement represents an index of the heat dissipation characteristics of a metallized ceramic substrate used in a high-output power module.
IN_DEVELOPMENT
prSSH ISO 4825-1:2023
40.20
DIS ballot initiated: 12 weeks
May 9, 2024
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