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SSH EN 62979:2017

Photovoltaic module - Bypass diode - Thermal runaway test

Apr 10, 2018

General information

60.60     Feb 1, 2018

DPS

DPS/KT 6

European Norm

27.160  

English  

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Scope

IEC 62979:2017(E) provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.

Life cycle

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PUBLISHED
SSH EN 62979:2017
60.60 Standard published
Feb 1, 2018

Related project

Adopted from EN 62979:2017